Method of phase contrast imaging

ABSTRACT

Disclosed herein is a method, comprising: for i=1, . . . , M, sending a pencil radiation beam (i) toward an image sensor, wherein the pencil radiation beam (i) is incident on an incident region (i) on an active area of the image sensor, wherein the pencil radiation beam (i) is aimed at a target region (i) on the active area, wherein M is a positive integer, for i=1, . . . , M, determining an offset (i) between the incident region (i) and the target region (i).

BACKGROUND

A radiation detector is a device that measures a property of aradiation. Examples of the property may include a spatial distributionof the intensity, phase, and polarization of the radiation. Theradiation may be one that has interacted with an object. For example,the radiation measured by the radiation detector may be a radiation thathas penetrated the object. The radiation may be an electromagneticradiation such as infrared light, visible light, ultraviolet light,X-ray or y-ray. The radiation may be of other types such as α-rays andβ-rays. An imaging system may include multiple radiation detectors.

SUMMARY

Disclosed herein is a method, comprising: for i=1, . . . , M, sending apencil radiation beam (i) toward an image sensor, wherein the pencilradiation beam (i) is incident on an incident region (i) on an activearea of the image sensor, wherein the pencil radiation beam (i) is aimedat a target region (i) on the active area, wherein M is a positiveinteger, for i=1, . . . , M, determining an offset (i) between theincident region (i) and the target region (i).

In an aspect, the active area is the only active area of the imagesensor and the active area is spatially continuous.

In an aspect, the method further comprises: determining a refractiveindex for a point (i), i=1, . . . , M, of an object based on the offset(i); wherein the pencil radiation beam (i) is incident on the point (i).

In an aspect, each of the target regions (i), i=1, . . . , M, is notsmaller than a pixel of the image sensor.

In an aspect, any two of the target regions (i), i=1, . . . , M, at thesame time are spaced apart by at least 10 times of a width of a pixel ofthe image sensor.

In an aspect, the pencil radiation beams (i), i=1, . . . , M, are formedby directing radiation through at least a pinhole of a filter, and themethod further comprises moving the filter relative to the image sensorbetween multiple exposures.

In an aspect, the method further comprises: capturing images of thepencil radiation beams (i), i=1, . . . , M, determining a position (i)of the incident region (i) based on the captured image of the pencilradiation beam (i), wherein said determining the offset (i) is based onthe position (i) of the incident region (i).

In an aspect, the method further comprises: for i=1, . . . , M, sendingadditional pencil radiation beams (i, j), j=1, . . . , Ni, wherein Ni isa positive integer, and wherein each of the additional pencil radiationbeams (i, j), j=1, . . . , Ni is parallel to and overlaps the pencilradiation beam (i); capturing images of the pencil radiation beams (i),i=1, . . . , M and the additional pencil radiation beams (i, j), i=1, .. . , M, and j=1, . . . , Ni; and for i=1, . . . , M, applying a superresolution algorithm to the image of the pencil radiation beam (i) andthe images of the additional pencil radiation beams (i, j), j=1, . . . ,Ni thereby resulting in an enhanced image (i) of the pencil radiationbeam (i), determining a position (i) of the incident region (i) based onthe enhanced image (i), wherein said determining the offset (i) is basedon the position (i) of the incident region (i).

Disclosed herein is a method, comprising: sending first fan radiationbeams and second fan radiation beams toward an image sensor, wherein fori=1, . . . , M, a pair (i) of one of the first fan radiation beams andone of the second fan radiation beams are respectively incident on twoincident regions on an active area of the image sensor, the two incidentregions sharing a common incident region (i) on the active area, whereinM is a positive integer, wherein for i=1, . . . , M, the pair (i) arerespectively aimed at two target regions on the active area, the twotarget regions sharing a common target region (i) on the active area,for i=1, . . . , M, determining an offset (i) between the commonincident region (i) and the common target region (i).

In an aspect, the active area is the only active area of the imagesensor and the active area is spatially continuous.

In an aspect, the method further comprises determining a refractiveindex for a point (i), i=1, . . . , M, of an object based on the offset(i), wherein both fan radiation beams of the pair (i) are incident onthe point (i).

In an aspect, each of the common target regions (i), i=1, . . . , M, isnot smaller than a pixel of the image sensor.

In an aspect, any two target regions on the active area any two beams ofthe first fan radiation beams are aimed at at the same time are spacedapart by at least 10 times of a width of a pixel of the image sensor.

In an aspect, target regions on the active area the first fan radiationbeams are aimed at are parallel to each other.

In an aspect, the first fan radiation beams are formed by directingradiation through least a slit of a filter, and wherein the methodfurther comprises moving the filter relative to the image sensor betweenmultiple exposures.

In an aspect, target regions on the active area the first fan radiationbeams are aimed at are not parallel to target regions on the active areathe second fan radiation beams are aimed at.

In an aspect, the first fan radiation beams are formed by directingradiation through first slits of a filter and the second fan radiationbeams are formed by directing radiation through second slits of thefilter, and wherein the first slits are parallel to one another, thesecond slits are parallel to one another and the first slits are notparallel to the second slits.

In an aspect, the method further comprises: capturing images of thefirst and second fan radiation beams, determining a position (i) of thecommon incident region (i) based on captured images of the two beams ofthe pair (i), wherein said determining the offset (i) is based on theposition (i) of the common incident region (i).

In an aspect, the method further comprises: for each beam of the firstand second fan radiation beams, sending additional fan radiation beamsparallel to and overlapping said beam of the first and second fanradiation beams; capturing images of the first and second fan radiationbeams and their associated additional fan radiation beams; and for eachbeam of the first and second fan radiation beams, applying a superresolution algorithm to the image of said beam and the images of theadditional fan radiation beams associated with said beam therebyresulting in an enhanced image of said beam, determining a position (i)of the common incident region (i) based on the enhanced images of thetwo beams of the pair (i), wherein said determining the offset (i) isbased on the position (i) of the common incident region (i).

In an aspect, the second fan radiation beams are sent after the firstfan radiation beams are sent.

BRIEF DESCRIPTION OF FIGURES

FIG. 1 schematically shows a radiation detector, according to anembodiment.

FIG. 2A schematically shows a simplified cross-sectional view of theradiation detector.

FIG. 2B schematically shows a detailed cross-sectional view of theradiation detector.

FIG. 2C schematically shows an alternative detailed cross-sectional viewof the radiation detector.

FIG. 3 schematically shows a top view of a package including theradiation detector and a printed circuit board (PCB).

FIG. 4 schematically shows a cross-sectional view of an image sensor,where a plurality of the packages of FIG. 3 are mounted to a system PCB,according to an embodiment.

FIG. 5A-FIG. 5D schematically show an imaging system and its operationusing pencil radiation beams, according to different embodiments.

FIG. 6A-FIG. 6F schematically show an imaging system and its operationusing fan radiation beams, according to different embodiments.

FIG. 7A-FIG. 7G show the operation of the imaging system of FIG. 6A-FIG.6F with different embodiments of a filter.

FIG. 8A-FIG. 8C schematically show the imaging system 500 and itsoperation using the image sensor, according to different embodiments.

FIG. 9A-FIG. 9C schematically show the imaging system 600 and itsoperation using the image sensor, according to different embodiments.

FIG. 9D & FIG. 9E respectively show two flowcharts summarizing andgeneralizing the operations of the imaging systems 500 and 600 using theimage sensor, according to different embodiments.

DETAILED DESCRIPTION

FIG. 1 schematically shows a radiation detector 100, as an example. Theradiation detector 100 includes an array of pixels 150 (also referred toas sensing elements 150). The array may be a rectangular array (as shownin FIG. 1 ), a honeycomb array, a hexagonal array or any other suitablearray. The array of pixels 150 in the example of FIG. 1 has 7 rows and 4columns; however, in general, the array of pixels 150 may have anynumber of rows and any number of columns.

Each pixel 150 may be configured to detect radiation from a radiationsource (not shown) incident thereon and may be configured to measure acharacteristic (e.g., the energy of the particles, the wavelength, andthe frequency) of the radiation. A radiation may include particles suchas photons (electromagnetic waves) and subatomic particles. Each pixel150 may be configured to count numbers of particles of radiationincident thereon whose energy falls in a plurality of bins of energy,within a period of time. All the pixels 150 may be configured to countthe numbers of particles of radiation incident thereon within aplurality of bins of energy within the same period of time. When theincident particles of radiation have similar energy, the pixels 150 maybe simply configured to count numbers of particles of radiation incidentthereon within a period of time, without measuring the energy of theindividual particles of radiation.

Each pixel 150 may have its own analog-to-digital converter (ADC)configured to digitize an analog signal representing the energy of anincident particle of radiation into a digital signal, or to digitize ananalog signal representing the total energy of a plurality of incidentparticles of radiation into a digital signal. The pixels 150 may beconfigured to operate in parallel. For example, when one pixel 150measures an incident particle of radiation, another pixel 150 may bewaiting for a particle of radiation to arrive. The pixels 150 may nothave to be individually addressable.

The radiation detector 100 described here may have applications such asin an X-ray telescope, X-ray mammography, industrial X-ray defectdetection, X-ray microscopy or microradiography, X-ray castinginspection, X-ray non-destructive testing, X-ray weld inspection, X-raydigital subtraction angiography, etc. It may be suitable to use thisradiation detector 100 in place of a photographic plate, a photographicfilm, a PSP plate, an X-ray image intensifier, a scintillator, oranother semiconductor X-ray detector.

FIG. 2A schematically shows a simplified cross-sectional view of theradiation detector 100 of FIG. 1 along a line 2A-2A, according to anembodiment. More specifically, the radiation detector 100 may include aradiation absorption layer 110 and an electronics layer 120 (e.g., anASIC) for processing or analyzing electrical signals which incidentradiation generates in the radiation absorption layer 110. The radiationdetector 100 may or may not include a scintillator (not shown). Theradiation absorption layer 110 may include a semiconductor material suchas, silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof.The semiconductor material may have a high mass attenuation coefficientfor the radiation of interest.

FIG. 2B schematically shows a detailed cross-sectional view of theradiation detector 100 of FIG. 1 along the line 2A-2A, as an example.More specifically, the radiation absorption layer 110 may include one ormore diodes (e.g., p-i-n or p-n) formed by a first doped region 111, oneor more discrete regions 114 of a second doped region 113. The seconddoped region 113 may be separated from the first doped region 111 by anoptional intrinsic region 112. The discrete regions 114 are separatedfrom one another by the first doped region 111 or the intrinsic region112. The first doped region 111 and the second doped region 113 haveopposite types of doping (e.g., region 111 is p-type and region 113 isn-type, or region 111 is n-type and region 113 is p-type). In theexample of FIG. 2B, each of the discrete regions 114 of the second dopedregion 113 forms a diode with the first doped region 111 and theoptional intrinsic region 112. Namely, in the example in FIG. 2B, theradiation absorption layer 110 has a plurality of diodes (morespecifically, 7 diodes corresponding to 7 pixels 150 of one row in thearray of FIG. 1 , of which only 2 pixels 150 are labeled in FIG. 2B forsimplicity). The plurality of diodes have an electrode 119A as a shared(common) electrode. The first doped region 111 may also have discreteportions.

The electronics layer 120 may include an electronic system 121 suitablefor processing or interpreting signals generated by the radiationincident on the radiation absorption layer 110. The electronic system121 may include an analog circuitry such as a filter network,amplifiers, integrators, and comparators, or a digital circuitry such asa microprocessor, and memory. The electronic system 121 may include oneor more ADCs. The electronic system 121 may include components shared bythe pixels 150 or components dedicated to a single pixel 150. Forexample, the electronic system 121 may include an amplifier dedicated toeach pixel 150 and a microprocessor shared among all the pixels 150. Theelectronic system 121 may be electrically connected to the pixels 150 byvias 131. Space among the vias may be filled with a filler material 130,which may increase the mechanical stability of the connection of theelectronics layer 120 to the radiation absorption layer 110. Otherbonding techniques are possible to connect the electronic system 121 tothe pixels 150 without using the vias 131.

When radiation from the radiation source (not shown) hits the radiationabsorption layer 110 including diodes, particles of the radiation may beabsorbed and generate one or more charge carriers (e.g., electrons,holes) by a number of mechanisms. The charge carriers may drift to theelectrodes of one of the diodes under an electric field. The field maybe an external electric field. The electrical contact 119B may includediscrete portions each of which is in electrical contact with thediscrete regions 114. The term “electrical contact” may be usedinterchangeably with the word “electrode.” In an embodiment, the chargecarriers may drift in directions such that the charge carriers generatedby a single particle of the radiation are not substantially shared bytwo different discrete regions 114 (“not substantially shared” heremeans less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete regions114 than the rest of the charge carriers). Charge carriers generated bya particle of the radiation incident around the footprint of one ofthese discrete regions 114 are not substantially shared with another ofthese discrete regions 114. A pixel 150 associated with a discreteregion 114 may be an area around the discrete region 114 in whichsubstantially all (more than 98%, more than 99.5%, more than 99.9%, ormore than 99.99% of) charge carriers generated by a particle of theradiation incident therein flow to the discrete region 114. Namely, lessthan 2%, less than 1%, less than 0.1%, or less than 0.01% of thesecharge carriers flow beyond the pixel 150.

FIG. 2C schematically shows an alternative detailed cross-sectional viewof the radiation detector 100 of FIG. 1 along the line 2A-2A, accordingto an embodiment. More specifically, the radiation absorption layer 110may include a resistor of a semiconductor material such as, silicon,germanium, GaAs, CdTe, CdZnTe, or a combination thereof, but does notinclude a diode. The semiconductor material may have a high massattenuation coefficient for the radiation of interest. In an embodiment,the electronics layer 120 of FIG. 2C is similar to the electronics layer120 of FIG. 2B in terms of structure and function.

When the radiation hits the radiation absorption layer 110 including theresistor but not diodes, it may be absorbed and generate one or morecharge carriers by a number of mechanisms. A particle of the radiationmay generate 10 to 100,000 charge carriers. The charge carriers maydrift to the electrical contacts 119A and 119B under an electric field.The electric field may be an external electric field. The electricalcontact 119B includes discrete portions. In an embodiment, the chargecarriers may drift in directions such that the charge carriers generatedby a single particle of the radiation are not substantially shared bytwo different discrete portions of the electrical contact 119B (“notsubstantially shared” here means less than 2%, less than 0.5%, less than0.1%, or less than 0.01% of these charge carriers flow to a differentone of the discrete portions than the rest of the charge carriers).Charge carriers generated by a particle of the radiation incident aroundthe footprint of one of these discrete portions of the electricalcontact 119B are not substantially shared with another of these discreteportions of the electrical contact 119B. A pixel 150 associated with adiscrete portion of the electrical contact 119B may be an area aroundthe discrete portion in which substantially all (more than 98%, morethan 99.5%, more than 99.9% or more than 99.99% of) charge carriersgenerated by a particle of the radiation incident therein flow to thediscrete portion of the electrical contact 119B. Namely, less than 2%,less than 0.5%, less than 0.1%, or less than 0.01% of these chargecarriers flow beyond the pixel associated with the one discrete portionof the electrical contact 119B.

FIG. 3 schematically shows a top view of a package 200 including theradiation detector 100 and a printed circuit board (PCB) 400. The term“PCB” as used herein is not limited to a particular material. Forexample, a PCB may include a semiconductor. The radiation detector 100may be mounted to the PCB 400. The wiring between the detector 100 andthe PCB 400 is not shown for the sake of clarity. The PCB 400 may haveone or more radiation detectors 100. The PCB 400 may have an area 405not covered by the radiation detector 100 (e.g., for accommodatingbonding wires 410). The radiation detector 100 may have an active area190, which is where the pixels 150 (FIG. 1 ) are located. The radiationdetector 100 may have a perimeter zone 195 near the edges of theradiation detector 100. The perimeter zone 195 has no pixels and theradiation detector 100 does not detect particles of radiation incidenton the perimeter zone 195.

FIG. 4 schematically shows a cross-sectional view of an image sensor490, according to an embodiment. The image sensor 490 may include aplurality of the packages 200 of FIG. 3 mounted to a system PCB 450.FIG. 4 shows only 2 packages 200 as an example. The electricalconnection between the PCBs 400 and the system PCB 450 may be made bybonding wires 410. In order to accommodate the bonding wires 410 on thePCB 400, the PCB 400 may have the area 405 not covered by the detector100. In order to accommodate the bonding wires 410 on the system PCB450, the packages 200 may have gaps in between. The gaps may beapproximately 1 mm or more. Particles of radiation incident on theperimeter zones 195, on the area 405 or on the gaps cannot be detectedby the packages 200 on the system PCB 450. A dead zone of a radiationdetector (e.g., the radiation detector 100) is the area of theradiation-receiving surface of the radiation detector, in which incidentparticles of radiation cannot be detected by the radiation detector. Adead zone of a package (e.g., package 200) is the area of theradiation-receiving surface of the package, in which incident particlesof radiation cannot be detected by the detector or detectors in thepackage. In this example shown in FIG. 3 and FIG. 4 , the dead zone ofthe package 200 includes the perimeter zones 195 and the area 405. Adead zone (e.g., 488) of an image sensor (e.g., image sensor 490) with agroup of packages (e.g., packages mounted on the same PCB, packagesarranged in the same layer) includes the combination of the dead zonesof the packages in the group and the gaps among the packages.

The image sensor 490 including the radiation detectors 100 may have thedead zone 488 incapable of detecting incident radiation. However, theimage sensor 490 may capture images of all points of an object (notshown), and then these captured images may be stitched to form a fullimage of the entire object.

FIG. 5A schematically shows a perspective view of an imaging system 500,according to an embodiment. In an embodiment, the imaging system 500 maycomprise a radiation source system 510+520 and the image sensor 490. Forsimplicity, only one radiation detector 100 of the image sensor 490 isshown. In an embodiment, the radiation source system 510+520 maycomprise a radiation source 510 and a filter 520. In an embodiment, thefilter 520 may comprise a pinhole 522. The pinhole 522 may have theshape of a circle, a rectangle, a square, etc. In an embodiment, thefilter 520 may comprise a silicon substrate (not shown) with a metallayer (not shown) on a surface of the substrate. The metal layer mayhave an aperture that plays the role of the pinhole 522. The siliconsubstrate does not necessarily have a physical hole.

For simplicity, only the active area 190 of the radiation detector 100is shown in FIG. 5A (i.e., the other parts of the radiation detector 100are not shown). In an embodiment, an object 530 may be positionedbetween the radiation source system 510+520 and the radiation detector100.

In an embodiment, the operation of the imaging system 500 may be carriedout in multiple exposures as follows. During a first exposure, a pencilradiation beam 513 a may be sent from the pinhole 522 of the filter 520and aimed at a target region 513 at on the active area 190. A radiationbeam is said to be aimed at a region or point if the entire region orpoint would be exposed to the radiation beam in vacuum (i.e., withoutthe presence of the object 530). In this case, it is also said that theregion or point is targeted by the radiation beam, or the radiation beamtargets the region or point. Assume that the pencil radiation beam 513 aintersects the object 530 and then is incident on an incident region 513ai on the active area 190.

In an embodiment, during the first exposure, the radiation detector 100may capture an image of the pencil radiation beam 513 a. Next, in anembodiment, the radiation detector 100 may determine the position of theincident region 513 ai based on the captured image of the pencilradiation beam 513 a. Next, in an embodiment, the radiation detector 100may determine an offset 513 ax between the incident region 513 ai andthe target region 513 at based on the determined position of theincident region 513 ai.

In an embodiment, the pencil radiation beam 513 a may be created bysending a cone radiation beam 513.1 from the radiation source 510 towardthe pinhole 522 of the filter 520. In an embodiment, only the portion ofthe cone radiation beam 513.1 incident on the pinhole 522 may be allowedto pass the filter 520 thereby resulting in the pencil radiation beam513 a.

Next, during a second exposure, in an embodiment, with reference to FIG.5B, a pencil radiation beam 513 b may be sent from the pinhole 522 ofthe filter 520 and aimed at a target region 513 bt on the active area190. Assume that the pencil radiation beam 513 b intersects the object530 and then is incident on an incident region 513 bi on the active area190. The words “first”, “second”, and other ordinal numerals in thisdisclosure are used only for easy reference and do not imply anychronological order or any place of occurrence. For example, just by theuse of “first” and “second”, there is no implication that the secondexposure is performed after the first exposure is performed. For anotherexample, just by the use of “first” and “second”, there is noimplication that the first exposure and the second exposure areperformed in the same imaging system (e.g., the imaging system 500).

In an embodiment, during the second exposure, the radiation detector 100may capture an image of the pencil radiation beam 513 b. Next, in anembodiment, the radiation detector 100 may determine the position of theincident region 513 bi based on the captured image of the pencilradiation beam 513 b. Next, in an embodiment, the radiation detector 100may determine an offset 513 bx between the incident region 513 bi andthe target region 513 bt based on the determined position of theincident region 513 bi.

In an embodiment, the pencil radiation beam 513 b may be created asfollows. After the first exposure is performed and before the secondexposure is performed (i.e., between the first and second exposures),the filter 520 may be moved relative to the radiation detector 100, theradiation source 510, and the object 530 (while the radiation detector100, the radiation source 510, and the object 530 are stationary withrespect to each other) from the position as shown in FIG. 5A to anotherposition as shown in FIG. 5B (i.e., to the right). Then, in anembodiment, during the second exposure, a cone radiation beam 513.2 maybe sent from the radiation source 510 toward the pinhole 522 of thefilter 520 thereby creating the pencil radiation beam 513 b.

Next, in an embodiment, after the second exposure is performed,additional exposures similar to the first and second exposures may beperformed. Specifically, additional pencil radiation beams (similar tothe pencil radiation beams 513 a and 513 b) may be sent from the pinhole522 during the additional exposures. The filter 520 may be movedrelative to the radiation detector 100 between the additional exposures.The associated offsets (similar to the offsets 513 ax and 513 bx) may bedetermined in a similar manner.

Each of the pencil radiation beams mentioned above may either intersector miss the object 530. The case in which the pencil radiation beamintersects the object 530 is described above (e.g., the case of thepencil radiation beam 513 a described with reference to FIG. 5A). If thepencil radiation beam misses the object 530, then the associated offsetwould be determined to be zero (because the associated incident regionis the same as the associated target region).

FIG. 5C shows a flowchart 580 generalizing and summarizing an operationof the imaging system 500, according to an embodiment. In step 582, inan embodiment, for i=1, . . . , M, a pencil radiation beam (i) may besent incident on an incident region (i) on the active area 190 of theradiation detector 100, wherein the pencil radiation beam (i) is aimedat a target region (i) on the active area 190, and wherein M is apositive integer. For example, with reference to FIG. 5A, the pencilradiation beam 513 a may be sent incident on the incident region 513 aion the active area 190 of the radiation detector 100, wherein the pencilradiation beam 513 a may be aimed at the target region 513 at on theactive area 190.

In step 584, in an embodiment, for i=1, . . . , M, an offset (i) betweenthe incident region (i) and the target region (i) may be determined. Forexample, with reference to FIG. 5A, the offset 513 ax between theincident region 513 ai and the target region 513 at may be determined.

In summary, for any target region on the active area 190, the positionof the associated incident region is determined in terms of the offsetbetween the incident region and the target region. For example, in FIG.5A, for the target region 513 at, the position of the associatedincident region 513 ai is determined in terms of the offset 513 ax.Similarly, in FIG. 5B, for the target region 513 bt, the position of theassociated incident region 513 bi is determined in terms of the offset513 bx.

In an embodiment, the pencil radiation beams (i), i=1, . . . , M may beX-ray beams. In an embodiment, each point of the object 530 may betargeted by at least a pencil radiation beam of the pencil radiationbeams (i), i=1, . . . , M. In other words, the pencil radiation beams(i), i=1, . . . , M scan the entire object 530.

In an embodiment, in the case where the entire object 530 is scanned bythe pencil radiation beams (i), i=1, . . . , M as mentioned above, theradiation detector 100 may determine a refractive index for each pointof the object 530 based on all the determined offsets (i), i=1, . . . ,M. In an embodiment, the size of each of the target regions (i), i=1, .. . , M may be at least the size of a pixel 150 of the radiationdetector 100.

In the embodiments described above, with reference to FIG. 5A & FIG. 5B,only one pencil radiation beam is sent during each exposure. Forexample, only the pencil radiation beam 513 a is sent during the firstexposure. Similarly, only the pencil radiation beam 513 b is sent duringthe second exposure. In an alternative embodiment, the pencil radiationbeams (e.g., both the pencil radiation beam 513 a and the pencilradiation beam 513 b) may be simultaneously sent from the filter 520during the first exposure as shown in FIG. 5D.

In an embodiment, during the first exposure, the radiation detector 100may capture an image of both the pencil radiation beams 513 a and 513 b.Then, in an embodiment, the radiation detector 100 may determine thepositions of the incident regions 513 ai and 513 bi based on thecaptured image. Then, in an embodiment, the radiation detector 100 maydetermine the offsets 513 ax and 513 bx based on the determinedpositions of the incident regions 513 ai and 513 bi.

In an embodiment, during the first exposure, the pencil radiation beam513 a and the pencil radiation beam 513 b may be simultaneously createdby sending the cone radiation beam 513.1 from the radiation source 510toward two pinholes 522 and 522′ of the filter 520 (i.e., the filter 520may have the additional pinhole 522′ in addition to the pinhole 522). Inan embodiment, only the portions of the cone radiation beam 513.1incident on the pinholes 522 and 522′ may be allowed to pass the filter520 thereby resulting in the pencil radiation beams 513 a and 513 b,respectively.

In general, the filter 520 may have one pinhole or multiple pinholes(similar to the pinhole 522). The more pinholes the filter 520 has, themore resulting pencil radiation beams (similar to the pencil radiationbeam 513 a) may be sent simultaneously from the filter 520 during eachexposure, and therefore the faster the object 530 may be scanned withthe resulting pencil radiation beams.

In an embodiment, with reference to the flowchart 580 of FIG. 5C, imagesof the pencil radiation beams (i), i=1, . . . , M may be captured usingthe radiation detector 100. In an embodiment, said determining theoffset (i) of step 584 may comprise (A) determining a position (i) ofthe incident region (i) based on the captured image of the pencilradiation beam (i), and (B) determining the offset (i) based on theposition (i) of the incident region (i).

For example, with reference to FIG. 5A, the offset 513 ax may bedetermined by (A) determining the position of the incident region 513 aibased on the captured image of the pencil radiation beam 513, and (B)determining the offset 513 ax based on the position of the incidentregion 513 ai.

In an embodiment, with reference to FIG. 5D, the minimum distance 513 dbetween the target region 513 at and the target region 513 bt may be atleast a pre-specified distance so as to avoid confusion as to whichpencil radiation beam is incident on which incident region. In anembodiment, in general, with the filter 520 having multiple pinholes, aminimum distance between any two points of any two target regions on theactive area 190 of any two beams (A) being of the pencil radiation beams(i), i=1, . . . , M and (B) being sent during any one exposure in theimaging system 500 may be at least a pre-specified distance.

In an embodiment, the pre-specified distance may be in terms of anabsolute length unit (e.g., in microns). In an alternative embodiment,the pre-specified distance may be in terms of the size of a pixel 150 ofthe radiation detector 100. For example, the pre-specified distance maybe 10 times the size of a pixel 150.

In an embodiment, improvements may be made in determining the positionof an incident region (e.g., the incident region 513 ai of FIG. 5A),especially when the size of the incident region is smaller than the sizeof the pixel 150 of the radiation detector 100. Specifically, withreference to FIG. 5A, for the pencil radiation beam 513 a, additionalpencil radiation beams (not shown) may be sent one after anotherincident on the active area 190 wherein each of the additional pencilradiation beams is parallel to and overlaps the pencil radiation beam513 a. In an embodiment, these additional pencil radiation beams may becreated by moving the filter 520 relative to the radiation detector 100by small displacements and sending different cone radiation beams(similar to the cone radiation beam 513.1) from the radiation source 510toward the pinhole 522. In an embodiment, these additional pencilradiation beams may be created by moving the radiation detector 100relative to the filter 520 by small displacements. Then, in anembodiment, a super resolution algorithm may be applied to images(captured by the radiation detector 100) of the pencil radiation beam513 a and the additional pencil radiation beams thereby resulting in anenhanced image of the pencil radiation beam 513 a. Then, in anembodiment, the position of the incident region 513 ai may be determinedbased on the enhanced image of the pencil radiation beam 513 a. Then, inan embodiment, the offset 513 ax may be determined based on thedetermined position of the incident region 513 ai.

In general, with reference to FIG. 5A-FIG. 5D, in an embodiment, fori=1, . . . , M, additional pencil radiation beams (i, j), j=1, . . . ,Ni, wherein Ni is a positive integer, wherein each additional pencilradiation beam of the additional pencil radiation beams (i, j), j=1, . .. , Ni is parallel to and overlaps the pencil radiation beam (i). In anembodiment, images of the pencil radiation beams (i), i=1, . . . , M andthe additional pencil radiation beams (i, j), i=1, . . . , M, and j=1, .. . , Ni may be captured using the radiation detector 100.

In an embodiment, for i=1, . . . , M, a super resolution algorithm maybe applied to the image of the pencil radiation beam (i) and the imagesof the additional pencil radiation beams (i, j), j=1, . . . , Ni therebyresulting in an enhanced image (i) of the pencil radiation beam (i). Inan embodiment, said determining the offset (i) comprises (A) determininga position (i) of the incident region (i) based on the enhanced image(i), and (B) determining the offset (i) based on the position (i) of theincident region (i).

FIG. 6A schematically shows a perspective view of an imaging system 600,according to an embodiment. In an embodiment, the imaging system 600 maybe similar to the imaging system 500 of FIG. 5A, except that in theimaging system 600, a filter 620 is used in place of the filter 520. Inan embodiment, the filter 620 may comprise a slit 622. In an embodiment,the slit 622 may be similar to the pinhole 522 (FIG. 5A) in structureand function except for the shape.

In an embodiment, the operation of the imaging system 600 may be carriedout in multiple exposures as follows.

During a third exposure, a fan radiation beam 613 a may be sent from theslit 622 of the filter 620 and aimed at a target region 613 at on theactive area 190. Assume that the fan radiation beam 613 a intersects theobject 530 (which is partially shown for simplicity) and then isincident on an incident region 613 ai on the active area 190. In anembodiment, during the third exposure, the radiation detector 100 maycapture an image of the fan radiation beam 613 a.

In an embodiment, the fan radiation beam 613 a may be created by sendinga cone radiation beam 613.1 from the radiation source 510 toward theslit 622 of the filter 620. In an embodiment, only the portion of thecone radiation beam 613.1 incident on the slit 622 may be allowed topass the filter 620 thereby resulting in the fan radiation beam 613 a.In an embodiment, the entire target region 613 at may be on the activearea 190 as shown in FIG. 6A.

In an embodiment, with reference to FIG. 6B, after the third exposure isperformed, first additional exposures similar to the third exposure maybe performed one after another. In an embodiment, the target regionsassociated with the third exposure and the first additional exposuresmay cover the entire active area 190 as shown in FIG. 6B. In anembodiment, the target regions associated with the third exposure andthe first additional exposures may be parallel to each other as shown inFIG. 6B.

For example, with reference to FIG. 6A and FIG. 6B, after the thirdexposure is performed, the filter 620 may be shifted to the right (i.e.,in a direction perpendicular to the slit 622) relative to the radiationdetector 100 and the object 530 by a distance equal to the width 622 wof the slit 622, and then one of the first additional exposures may beperformed. The associated target region is region 613 at.1 as shown inFIG. 6B. After that, for example, the filter 620 may be shifted furtherto the right relative to the radiation detector 100 by a distance equalto the width 622 w of the slit 622, and then the next of the firstadditional exposures may be performed. The associated target region isregion 613 at.2 as shown in FIG. 6B.

Next, in an embodiment, with reference to FIG. 6C, after the firstadditional exposures are performed, during a fourth exposure, a fanradiation beam 613 b may be sent from the slit 622 and aimed at a targetregion 613 bt on the active area 190. Assume that the fan radiation beam613 b intersects the object 530 (which is partially shown forsimplicity) and then is incident on an incident region 613 bi on theactive area 190. In an embodiment, during the fourth exposure, theradiation detector 100 may capture an image of the fan radiation beam613 b.

In an embodiment, the fan radiation beam 613 b may be created asfollows. After the first additional exposures are performed, the filter620 may be rotated relative to the radiation detector 100 such that theslit 622 rotates relative to the radiation detector 100 around an axisperpendicular to the filter 620. In an embodiment, the angle of rotationmay be greater than 0° and smaller than 180°. In an embodiment, theangle of rotation may be 90° as shown. Then, the fourth exposure may beperformed.

In an embodiment, during the fourth exposure, a cone radiation beam613.2 may be sent from the radiation source 510 toward the slit 622 ofthe filter 620. In an embodiment, only the portion of the cone radiationbeam 613.2 incident on the slit 622 may be allowed to pass the filter620 thereby resulting in the fan radiation beam 613 b.

In an embodiment, with reference to FIG. 6D, after the fourth exposureis performed, second additional exposures similar to the fourth exposuremay be performed one after another. In an embodiment, the target regionsassociated with the fourth exposure and the second additional exposuresmay cover the entire active area 190 as shown in FIG. 6D. In anembodiment, the target regions associated with the fourth exposure andthe second additional exposures may be parallel to each other as shownin FIG. 6D.

For example, with reference to FIG. 6C and FIG. 6D, after the fourthexposure is performed, the filter 620 may be shifted toward viewer(i.e., in a direction perpendicular to the slit 622) relative to theradiation detector 100 and the object 530 by a distance equal to thewidth 622 w of the slit 622, and then one of the second additionalexposures may be performed. The associated target region is region 613bt.1 as shown in FIG. 6D. After that, for example, the filter 620 may beshifted further toward viewer relative to the radiation detector 100 bya distance equal to the width 622 w of the slit 622, and then the nextof the second additional exposures may be performed. The associatedtarget region is region 613 bt.2 as shown in FIG. 6D.

In an embodiment, after the second additional exposures are performed,common target regions each of which is a common region of (A) a targetregion associated with the third exposure and the first additionalexposures (i.e., a target region of FIG. 6B) and (B) a target regionassociated with the fourth exposure and the second additional exposures(i.e., a target region of FIG. 6D) may be identified, and offsetsassociated with the identified common target regions may be determined.For example, with reference to FIG. 6E, the radiation detector 100 mayidentify a common target region 613 ct which is a common region of (A)the target region 613 at of the third exposure and (B) the target region613 bt of the fourth exposure.

Then, an offset 613 cx associated with the identified common targetregion 613 ct may be determined as follows. First, in an embodiment, theradiation detector 100 may determine the position of a common incidentregion 613 ci (which is a common region of (A) the incident region 613ai of the fan radiation beam 613 a and (B) the incident region 613 bi ofthe fan radiation beam 613 b) based on the image of the fan radiationbeam 613 a and the image of the fan radiation beam 613 b which theradiation detector 100 captured during the third and fourth exposuresrespectively. Next, in an embodiment, the radiation detector 100 maydetermine the offset 613 cx between the common incident region 613 ciand the common target region 613 ct based on the determined position ofthe common incident region 613 ci.

FIG. 6F shows a flowchart 680 generalizing and summarizing an operationof the imaging system 600, according to an embodiment. In step 682, inan embodiment, first fan radiation beams (e.g., the fan radiation beamsof the third exposure and the first additional exposures whose targetregions are shown in FIG. 6B) and second fan radiation beams (e.g., thefan radiation beams of the fourth exposure and the second additionalexposures whose target regions are shown in FIG. 6D) may be sentincident on the active area 190 of the radiation detector 100, whereinfor i=1, . . . , M, a pair (i) of one of the first fan radiation beams(e.g., the fan radiation beam 613 a) and one of the second fan radiationbeams (e.g., the fan radiation beam 613 b) are incident on two incidentregions (e.g., the 2 incident regions 613 ai and 613 bi) on the activearea 190, the two incident regions sharing a common incident region (i)(e.g., the common incident region 613 ci) on the active area 190,wherein M is a positive integer, and wherein for i=1, . . . , M, thepair (i) (e.g., the fan radiation beams 613 a and 613 b) are aimed attwo target regions (e.g., the 2 target regions 613 at and 613 bt) on theactive area 190, the two target regions sharing a common target region(i) (e.g., the common target region 613 ct) on the active area 190.

In step 684, for i=1, . . . , M, an offset (i) between the commonincident region (i) and the common target region (i) may be determined.For example, with reference to FIG. 6E, the offset 613 cx between thecommon incident region 613 ci and the common target region 613 ct may bedetermined.

In an embodiment, the first and second fan radiation beams used in theimaging system 600 may be X-ray beams. In an embodiment, each point ofthe object 530 may be targeted by each beam of at least a pair of thepairs (i), i=1, . . . , M. In other words, each point of the object 530is targeted by (A) at least a beam of the first fan radiation beams, and(B) at least a beam of the second fan radiation beams.

In an embodiment, in the case where each point of the object 530 istargeted by each beam of at least a pair of the pairs (i), i=1, . . . ,M, the radiation detector 100 of the imaging system 600 may determine arefractive index for each point of the object 530 based on all theoffsets (i), i=1, . . . , M determined in step 684 (FIG. 6F). In anembodiment, the size of each common target region of the common targetregions (i), i=1, . . . , M (e.g., the common target region 613 ct) isat least the size of a pixel 150 of the radiation detector 100.

In the embodiments described above with reference to FIG. 6A-FIG. 6E,during each exposure, only one fan radiation beam is sent from thefilter 620. For example, only the fan radiation beam 613 a is sentduring the third exposure as shown in FIG. 6A. For another example, onlythe fan radiation beam 613 b is sent during the fourth exposure as shownin FIG. 6C. This is because the filter 620 has only one slit 622.

In an alternative embodiment, with reference to FIG. 7A & FIG. 7B, thefilter 620 may have an additional slit 622′ in addition to the slit 622.As a result, during the third exposure, in an embodiment, two fanradiation beams may be sent simultaneously from the two slits 622 and622′ targeting two target regions 613 at and 613 at′ respectively.Therefore, the scanning of the object 530 by the fan radiation beams ascan be seen in the scanning of the active area 190 by the fan radiationbeams (FIG. 6B and FIG. 6D) would be twice faster.

In general, the filter 620 may have one slit (e.g., the slit 622) ormultiple slits (similar to the slit 622). The more slits the filter 620has, the more fan radiation beams (similar to the fan radiation beam 613a) may be simultaneously sent from the slits during each exposure in theimaging system 600, and therefore the faster the scanning of the object530 may progress.

In an embodiment, in case where multiple fan radiation beams are sentsimultaneously from the filter 620 during an exposure, to avoidconfusion as to which fan radiation beam is incident on which incidentregion, the minimum distance between any two points of any two targetregions on the active area 190 of any two beams (A) being of the firstand second fan radiation beams and (B) being sent during any oneexposure in the imaging system 600 (e.g., the distance 613 d between 2points A and B of the target regions 613 at and 613 at′ respectively inFIG. 7B) may be at least a pre-specified distance.

In an embodiment, the pre-specified distance may be in terms of anabsolute length unit (e.g., microns), or in terms of the size of a pixel150 of the radiation detector 100. In an embodiment, the pre-specifieddistance may be 10 times the size of a pixel 150 of the radiationdetector 100.

In an embodiment, the two slits 622 and 622′ may be parallel to eachother as shown in FIG. 7A. As a result, the 2 fan radiation beams (notshown) sent from the 2 slits 622 and 622′ during the third exposure areaimed at the two parallel target regions 613 at and 613 at′ as show inFIG. 7B.

In an embodiment, the filter 620 with the 2 parallel slits 622 and 622′may be moved relative to the radiation detector 100 between multipleexposures (e.g., the third exposure, the first additional exposures, thefourth exposure, and the second additional exposures) so that the fanradiation beams from the slits 622 and 622′ scan the object 530 twiceduring the multiple exposures as can be seen in the scanning of theactive area 190 twice in FIG. 6B and FIG. 6D.

In an alternative embodiment, the two slits 622 and 622′ of the filter620 may be non-parallel to each other as shown in FIG. 7C & FIG. 7E. Inan embodiment, the two slits 622 and 622′ may be perpendicular to eachother. In an embodiment, between exposures, the filter 620 may beshifted relative to the radiation detector 100 in a direction notparallel to any one of the non-parallel slits 622 and 622′.

FIG. 7D shows the two target regions 613 at and 613 at′ and other targetregions on an imaginary plane containing the active area 190 (not shownfor simplicity) as a result of a first scan of the imaginary plane usingfan radiation beams from the 2 non-parallel slits 622 and 622′ of FIG.7C during the third exposure and the first additional exposures,according to an embodiment.

Similarly, FIG. 7F shows the two target regions 613 bt and 613 bt′ andother target regions on the imaginary plane as a result of a second scanof the imaginary plane using fan radiation beams from the 2 non-parallelslits 622 and 622′ of FIG. 7E during the fourth exposure and the secondadditional exposures, according to an embodiment. More specifically, inan embodiment, after the first additional exposures are performed, thefilter 620 of FIG. 7C may be rotated 180° resulting in the filter 620 ofFIG. 7E. Then, the filter 620 may be used to make the second scan (whichmay be similar to the first scan in an embodiment) resulting in thetarget regions as shown in FIG. 7F.

FIG. 7G shows the target regions on the imaginary plane as a result ofboth the first scan and the second scan of the imaginary plane with thefan radiation beams from the slits 622 and 622′. In an embodiment, eachpoint of the active area 190 may be (A) in at least a target region ofthe first scan, and (B) in at least a target region of the second scanas shown in FIG. 7G.

In an embodiment, with reference to the flowchart 680 of FIG. 6F, imagesof the first and second fan radiation beams may be captured using theradiation detector 100. In an embodiment, said determining the offset(i) of step 684 may comprise (A) determining a position (i) of thecommon incident region (i) based on the two captured images of the twobeams of the pair (i), and (B) determining the offset (i) based on theposition (i) of the common incident region (i).

For example, with reference to FIG. 6E, the offset 613 cx may bedetermined by (A) determining the position of the common incident region613 ci based on the 2 captured images of the 2 beams of thecorresponding pair of the fan radiation beams 613 a and 613 b, and (B)determining the offset 613 cx based on the position of the commonincident region 613 ci.

In an embodiment, improvements may be made in determining the positionof a common incident region (e.g., the common incident region 613 ci ofFIG. 6E), especially when the size of the common incident region issmaller than the size of the pixel 150 of the radiation detector 100.

Specifically, with reference to the flowchart 680 of FIG. 6F, in anembodiment, for each beam of the first and second fan radiation beams(e.g., the fan radiation beam 613 a of FIG. 6A), additional fanradiation beam(s) may be sent, each of which is parallel to and overlapssaid beam (i.e., the beam 613 a) of the first and second fan radiationbeams. In an embodiment, images of the first and second fan radiationbeams and their associated additional fan radiation beams may becaptured using the radiation detector 100.

In an embodiment, for each beam of the first and second fan radiationbeams (e.g., the fan radiation beam 613 a of FIG. 6A), a superresolution algorithm may be applied to the image of said beam (i.e., thebeam 613 a) and the images of the additional fan radiation beam(s)associated with said beam thereby resulting in an enhanced image of saidbeam.

In an embodiment, said determining the offset (i) in step 684 maycomprise (A) determining a position (i) of the common incident region(i) based on the two enhanced images of the two beams of the pair (i),and (B) determining the offset (i) based on the position (i) of thecommon incident region (i). For example, with reference to FIG. 6E, saiddetermining the offset 613 cx of step 684 may comprise (A) determiningthe position of the common incident region 613 ci based on the twoenhanced images of the two beams 613 a and 613 b, and (B) determiningthe offset 613 cx based on the position of the common incident region613 ci.

In an embodiment, with reference to the flowchart 680 of FIG. 6F, thefirst fan radiation beams may be parallel to each other (e.g., the fanradiation beam 613 a and other fan radiation beams of the third exposureand the first additional exposures as indicated in FIG. 6A-FIG. 6B), andthe second fan radiation beams may be parallel to each other (e.g., thefan radiation beam 613 b and other fan radiation beams of the fourthexposure and the second additional exposures as indicated in FIG.6C-FIG. 6D), but the first fan radiation beams and the second fanradiation beams may be not parallel to each other.

In the embodiments described above, with reference to FIG. 5A-FIG. 7G,in the imaging system 500/600, between exposures, the filter 520/620 ismoved relative to the radiation detector 100, the radiation source 510,and the object 530, while the radiation detector 100, the radiationsource 510, and the object 530 are stationary with respect to eachother.

In an alternative embodiment, between the exposures, the filter 520/620may make the same movements as described in the embodiments above butthe radiation detector 100 may also move with the filter 520/620relative to the object 530 and the radiation source 510 such that thebeam(s) from the filter 520/620 target(s) the same target region(s) onthe active area 190 during each of the exposures in the imaging system500/600. The “(s)” at the end of a word means that the word may be withor without the “s”.

For example, with reference to FIG. 5A and FIG. 5B, in the imagingsystem 500, between the first and second exposures, the radiationdetector 100 may move with the filter 520 relative to the object 530such that the target region 513 at (targeted by the pencil radiationbeam 513 a during the first exposure as shown in FIG. 5A) and the targetregion 513 bt (targeted by the pencil radiation beam 513 b during thesecond exposure as shown in FIG. 5B) are at the same position on theactive area 190. In other words, during the second exposure, the pencilradiation beam 513 b targets the target region 513 at. The pencilradiation beams from the pinhole 522 in subsequent exposures also targetthe target region 513 at.

For another example, with reference to FIG. 5D, in the imaging system500, between exposures, the radiation detector 100 may move with thefilter 520 relative to the object 530 such that the 2 pencil radiationbeams from the 2 pinholes 522 and 522′ target the same 2 target regions(i.e., target regions 513 at and 513 bt) on the active area 190 duringeach of the exposures in the imaging system 500.

For yet another example, with reference to FIG. 6A, FIG. 6B, FIG. 6C,and FIG. 6D, in the imaging system 600, between exposures, the radiationdetector 100 may move with the filter 620 relative to the object 530such that the fan radiation beam from the slit 622 targets the sametarget region (i.e., the target region 613 at) on the active area 190during each of the exposures in the imaging system 600.

For yet another example, with reference to FIG. 7A and FIG. 7B, in theimaging system 600, between exposures, the radiation detector 100 maymove with the filter 620 relative to the object 530 such that the 2 fanradiation beams from the 2 slits 622 and 622′ target the same 2 targetregions (i.e., the target regions 613 at and 613 at′ of FIG. 7B) on theactive area 190 during each of the exposures in the imaging system 600.

In the embodiments described above, with reference to FIG. 5A-FIG. 7G,in the imaging system 500/600, the radiation detector 100 moves with thefilter 520/620 relative to the object 530 such that the beam(s) from thefilter 520/620 target(s) the same target region(s) on the active area190 during each of the exposures in the imaging system 500/600, whereinthe radiation detector 100 has only one active area 190.

In an alternative embodiment, all things (e.g., structure and function)may remain the same as described above except that the image sensor 490of FIG. 4 may be used in place of the radiation detector 100 in theimaging system 500/600. In an embodiment, the operation of the imagingsystem 500/600 including the image sensor 490 may be as follows.

In an embodiment, during a starting exposure (i.e., the very firstexposure), the target region(s) may be on the active areas 190 of theimage sensor 490. Then, between exposures in the imaging system 500/600,the image sensor 490 may move with the filter 520/620 relative to theobject 530 such that the beam(s) from the filter 520/620 target(s) thesame target region(s) on the active areas 190 of the image sensor 490during each of the exposures in the imaging system 500/600.

As shown in FIG. 8A, in an embodiment, during a starting exposure, thepencil radiation beam 513 a from the pinhole 522 may target the targetregion 513 at on an active area 190A of the image sensor 490 (assumingthe image sensor 490 comprises 4 active areas 190A, 190B, 190C, and 190Dspatially discontinuous from each other by the dead zone 488 forillustration). After the starting exposure, the image sensor 490 maymove with the filter 520 relative to the object 530 such that during thenext exposure, the pencil radiation beam 513 b from the pinhole 522targets the same target region (i.e., the target region 513 at) on theactive area 190A as shown in FIG. 8B.

As shown in FIG. 8C, in an embodiment, during a starting exposure, the 2pencil radiation beams from the pinholes 522 and 522′ may target 2target regions 513 at and 513 bt on the active areas 190A and 190B ofthe image sensor 490 as shown.

In an embodiment, after the starting exposure, the image sensor 490 maymove with the filter 520 relative to the object 530 such that during thenext exposure, the 2 pencil radiation beams from the 2 pinholes 522 and522′ target the same 2 target regions (i.e., the target regions 513 atand 513 bt) on the active areas 190A and 190B. In an alternativeembodiment, both pencil radiation beams from the pinholes 522 and 522′may target 2 target regions 513 at and 513 bt on a same active area 190(e.g., the active area 190A) during each of the exposures.

As shown in FIG. 9A, in an embodiment, during a starting exposure, thefan radiation beam from the slit 622 may target the target region 613 aton the active area 190A of the image sensor 490 as shown. In anembodiment, after the starting exposure, the image sensor 490 may movewith the filter 620 such that during the next exposure (not shown), thefan radiation beam from the slit 622 targets the same target region(i.e., the target region 613 at) on the active area 190A.

As shown in FIG. 9B, in an embodiment, during a starting exposure, the 2fan radiation beams from the 2 slits 622 and 622′ may target 2 targetregions on the active areas 190A and 190B of the image sensor 490 asshown. In an embodiment, after the starting exposure, the image sensor490 may move with the filter 620 relative to the object 530 such thatduring the next exposure (not shown), the 2 fan radiation beams from the2 slits 622 and 622′ may target the same 2 target regions on the activeareas 190A and 190B.

In an alternative embodiment, with reference to FIG. 9B, during thestarting exposure, both fan radiation beams from the 2 slits 622 and622′ may target 2 target regions on a same active area 190 (e.g., theactive area 190A). In yet another alternative embodiment (not shown),the filter 620 may comprise 4 parallel slits (similar to the slits 622and 622′), and during the starting exposure, 4 fan radiation beams fromthe 4 parallel slits of the filter 620 may target 4 target regions on 4respective active areas 190A, 190B, 190C, and 190D of the image sensor490.

As shown in FIG. 9C, in an embodiment, during a starting exposure, the 2fan radiation beams from the 2 slits 622 and 622′ may target 2 targetregions on the active area 190A of the image sensor 490 as shown.

In an embodiment, after the starting exposure, the image sensor 490 maymove with the filter 620 such that during the next exposure (not shown),the 2 fan radiation beams from the 2 slits 622 and 622′ target the same2 target regions on the active area 190A. In an alternative embodiment(not shown), during the starting exposure, the 2 fan radiation beamsfrom the slits 622 and 622′ may target 2 target regions on 2 respectiveactive areas 190 (e.g., the active areas 190A and 190B).

FIG. 9D shows a flowchart 980 generalizing and summarizing an operationof the imaging system 500 of FIG. 8A-FIG. 8C where the image sensor 490is used in place of the radiation detector 100, according to anembodiment.

In step 982, in an embodiment, for i=1, . . . , M, a pencil radiationbeam (i) (e.g., the pencil radiation beam 513 a of FIG. 8A) may be sentincident on an incident region (i) (e.g., the incident region 513 ai ofFIG. 8A) on the image sensor 490, wherein the pencil radiation beam (i)is aimed at a target region (i) (e.g., the target region 513 at) on theimage sensor 490, wherein M is a positive integer, wherein the imagesensor 490 comprises P active areas 190 (e.g., the active areas 190A-D)spatially discontinuous from each other, wherein P is an integer greaterthan 1, and wherein the incident regions (i), i=1, . . . , M and thetarget regions (i), i=1, . . . , M are on the P active areas 190.

In step 984, in an embodiment, for i=1, . . . , M, an offset (i) betweenthe incident region (i) and the target region (i) may be determined. Forexample, with reference to FIG. 8A, the offset 513 ax between theincident region 513 ai and the target region 513 at may be determined.

In general, in an embodiment, the operation of the imaging system 500 ofFIG. 8A-FIG. 8C may be similar to the operation of the imaging system500 of FIG. 5A-FIG. 5D.

FIG. 9E shows a flowchart 990 generalizing and summarizing an operationof the imaging system 600 of FIG. 9A-FIG. 9C where the image sensor 490is used in place of the radiation detector 100, according to anembodiment.

In step 992, in an embodiment, first fan radiation beams (e.g., the fanradiation beams of the third exposure and the first additional exposuressuch as the fan radiation beam 613 a of FIG. 6A) and second fanradiation beams (e.g., the fan radiation beams of the fourth exposureand the second additional exposures such as the fan radiation beam 613 bof FIG. 6C) may be sent incident on the image sensor 490, wherein fori=1, . . . , M, a pair (i) of one of the first fan radiation beams(e.g., the fan radiation beam 613 a of FIG. 6A) and one of the secondfan radiation beams (e.g., the fan radiation beam 613 b of FIG. 6C) areincident on two incident regions (e.g., the 2 incident regions 613 aiand 613 bi of FIG. 6E) on the image sensor 490, the two incident regionssharing a common incident region (i) (e.g., the common incident region613 ci of FIG. 6E) on the image sensor 490, wherein M is a positiveinteger, and wherein for i=1, . . . , M, the pair (i) are aimed at twotarget regions (e.g., the 2 target regions 613 at and 613 bt of FIG. 6E)on the image sensor 490, the two target regions sharing a common targetregion (i) (e.g., the common target region 613 ct) on the image sensor490, wherein the image sensor 490 comprises P active areas 190 (e.g.,the 4 active areas 190A-D) spatially discontinuous from each other,wherein P is an integer greater than 1, wherein the common incidentregions (i), i=1, . . . , M and the common target regions (i), i=1, . .. , M are on the P active areas 190.

In the step 994, an offset (i) between the common incident region (i)and the common target region (i) may be determined. For example, withreference to FIG. 6E & FIG. 9A, the offset 613 cx between the commonincident region 613 ci and the common target region 613 ct may bedetermined. In general, in an embodiment, the operation of the imagingsystem 600 of FIG. 9A-FIG. 9C may be similar to the operation of theimaging system 600 of FIG. 6A-FIG. 7G.

In an embodiment, with reference to FIG. 8A-FIG. 9C, where the imagesensor 490 is used in place of the radiation detector 100 in the imagingsystem 500/600, the refractive index of each point of the object 530 maybe determined as follows. For the case of the imaging system 500 havingthe image sensor 490 (FIG. 8A-FIG. 8C), in an embodiment, the refractiveindex of each point of the object 530 may be determined based on (A) theoffsets (i), i=1, . . . , M as determined in step 984 of FIG. 9D, and(B) the positions of the target regions (i), i=1, . . . , M relative tothe object 530. For the case of the imaging system 600 having the imagesensor 490 (FIG. 9A-FIG. 9C), in an embodiment, the refractive index ofeach point of the object 530 may be determined based on (A) the offsets(i), i=1, . . . , M as determined in step 994 of FIG. 9E, and (B) thepositions of the common target regions (i), i=1, . . . , M relative tothe object 530.

While various aspects and embodiments have been disclosed herein, otheraspects and embodiments will be apparent to those skilled in the art.The various aspects and embodiments disclosed herein are for purposes ofillustration and are not intended to be limiting, with the true scopeand spirit being indicated by the following claims.

What is claimed is:
 1. A method, comprising: for i=1, . . . , M, sendinga pencil radiation beam (i) toward an image sensor, wherein the pencilradiation beam (i) is incident on an incident region (i) on an activearea of the image sensor, wherein the pencil radiation beam (i) is aimedat a target region (i) on the active area, wherein M is a positiveinteger, for i=1, . . . , M, determining an offset (i) between theincident region (i) and the target region (i).
 2. The method of claim 1,wherein the active area is the only active area of the image sensor andthe active area is spatially continuous.
 3. The method of claim 1,further comprising determining a refractive index for a point (i), i=1,. . . , M, of an object based on the offset (i); wherein the pencilradiation beam (i) is incident on the point (i).
 4. The method of claim1, wherein each of the target regions (i), i=1, . . . , M, is notsmaller than a pixel of the image sensor.
 5. The method of claim 1,wherein any two of the target regions (i), i=1, . . . , M, at the sametime are spaced apart by at least 10 times of a width of a pixel of theimage sensor.
 6. The method of claim 1, wherein the pencil radiationbeams (i), i=1, . . . , M, are formed by directing radiation through atleast a pinhole of a filter, and wherein the method further comprisesmoving the filter relative to the image sensor between multipleexposures.
 7. The method of claim 1, further comprising capturing imagesof the pencil radiation beams (i), i=1, . . . , M, determining aposition (i) of the incident region (i) based on the captured image ofthe pencil radiation beam (i), wherein said determining the offset (i)is based on the position (i) of the incident region (i).
 8. The methodof claim 1, further comprising: for i=1, . . . , M, sending additionalpencil radiation beams (i, j), j=1, . . . , Ni, wherein Ni is a positiveinteger, and wherein each of the additional pencil radiation beams (i,j), j=1, . . . , Ni is parallel to and overlaps the pencil radiationbeam (i); capturing images of the pencil radiation beams (i), i=1, . . ., M and the additional pencil radiation beams (i, j), i=1, . . . , M,and j=1, . . . , Ni; and for i=1, . . . , M, applying a super resolutionalgorithm to the image of the pencil radiation beam (i) and the imagesof the additional pencil radiation beams (i, j), j=1, . . . , Ni therebyresulting in an enhanced image (i) of the pencil radiation beam (i),determining a position (i) of the incident region (i) based on theenhanced image (i), wherein said determining the offset (i) is based onthe position (i) of the incident region (i).
 9. A method, comprising:sending first fan radiation beams and second fan radiation beams towardan image sensor, wherein for i=1, . . . , M, a pair (i) of one of thefirst fan radiation beams and one of the second fan radiation beams arerespectively incident on two incident regions on an active area of theimage sensor, the two incident regions sharing a common incident region(i) on the active area, wherein M is a positive integer, wherein fori=1, . . . , M, the pair (i) are respectively aimed at two targetregions on the active area, the two target regions sharing a commontarget region (i) on the active area, for i=1, . . . , M, determining anoffset (i) between the common incident region (i) and the common targetregion (i).
 10. The method of claim 9, wherein the active area is theonly active area of the image sensor and the active area is spatiallycontinuous.
 11. The method of claim 9, further comprising determining arefractive index for a point (i), i=1, . . . , M, of an object based onthe offset (i), wherein both fan radiation beams of the pair (i) areincident on the point (i).
 12. The method of claim 9, wherein each ofthe common target regions (i), i=1, . . . , M, is not smaller than apixel of the image sensor.
 13. The method of claim 9, wherein any twotarget regions on the active area any two beams of the first fanradiation beams are aimed at at the same time are spaced apart by atleast 10 times of a width of a pixel of the image sensor.
 14. The methodof claim 9, wherein target regions on the active area the first fanradiation beams are aimed at are parallel to each other.
 15. The methodof claim 9, wherein the first fan radiation beams are formed bydirecting radiation through least a slit of a filter, and wherein themethod further comprises moving the filter relative to the image sensorbetween multiple exposures.
 16. The method of claim 9, wherein targetregions on the active area the first fan radiation beams are aimed atare not parallel to target regions on the active area the second fanradiation beams are aimed at.
 17. The method of claim 9, wherein thefirst fan radiation beams are formed by directing radiation throughfirst slits of a filter and the second fan radiation beams are formed bydirecting radiation through second slits of the filter, and wherein thefirst slits are parallel to one another, the second slits are parallelto one another and the first slits are not parallel to the second slits.18. The method of claim 9, further comprising capturing images of thefirst and second fan radiation beams, determining a position (i) of thecommon incident region (i) based on captured images of the two beams ofthe pair (i), wherein said determining the offset (i) is based on theposition (i) of the common incident region (i).
 19. The method of claim9, further comprising: for each beam of the first and second fanradiation beams, sending additional fan radiation beams parallel to andoverlapping said beam of the first and second fan radiation beams;capturing images of the first and second fan radiation beams and theirassociated additional fan radiation beams; and for each beam of thefirst and second fan radiation beams, applying a super resolutionalgorithm to the image of said beam and the images of the additional fanradiation beams associated with said beam thereby resulting in anenhanced image of said beam, determining a position (i) of the commonincident region (i) based on the enhanced images of the two beams of thepair (i), wherein said determining the offset (i) is based on theposition (i) of the common incident region (i).
 20. The method of claim9, wherein the second fan radiation beams are sent after the first fanradiation beams are sent.